MIT Creates Way To ‘Grow’ Transistors Only 3 Atoms Thick

Engineers at the Massachusetts Institute of Technology (MIT) developed a way of “growing” transistors only three atoms thick directly onto a semiconductor chip. The result is microscopic layers that can stack on top of each other, creating ultra-dense, ultra-powerful processors.
Previously, creating microscopic transistor layers required extreme temperatures of move than 1,000 degrees Fahrenheit, but that melted the silicon chips.
MIT researchers instead came up with a new process that kept the silicon cool but heated the transistor materials.